Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-27
2010-10-26
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000, C257S303000, C257S306000, C257S309000, C257S330000, C257S331000, C257SE27091, C257SE27095, C257SE27096, C257SE27104
Reexamination Certificate
active
07821047
ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor apparatus including: a semiconductor substrate; an element isolation region formed in the semiconductor substrate so as to extend in a first direction; a gate electrode formed in the semiconductor substrate so as to extend in a second direction crossing the first direction and to penetrate through the element isolation region; a gate insulating film interposed between the gate electrode and the semiconductor substrate; an interlayer dielectric film formed on the gate electrode; a ferroelectric capacitor including: first and second electrodes disposed on the interlayer dielectric film and a ferroelectric between the first and second electrodes; and first and second semiconductor pillars being in contact respectively with the first and second electrodes.
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patent: 2005-174977 (2005-06-01), None
Chen Yu
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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