Semiconductor device

Details Semiconductor device Semiconductor device

2007-05-31

2010-02-02

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S140000

Reexamination Certificate

active

07655992

ABSTRACT:
The invention is directed to providing a resistor with high reliability. The invention is also directed to miniaturizing a semiconductor device having a MOS transistor and a resistor element on the same semiconductor substrate. An N-type well region is formed in a front surface of a P-type semiconductor substrate, and a P−-type resistor layer is formed in a front surface of the well region. A conductive layer is annularly formed on the well region so as to surround the resistor layer. A predetermined voltage is applied to the conductive layer and a channel is not formed under the conductive layer during normal operation, thereby isolating a pull-down resistor from the other elements (e.g. a P-channel type MOS transistor). The resistor layer and an element isolation insulation film do not contact each other. Both the PMOS and the pull-down resistor are formed in one region surrounded by the element isolation insulation film.

REFERENCES:
patent: 6388252 (2002-05-01), Takahashi et al.
patent: 05-175228 (1993-07-01), None
patent: 9-26758 (1997-01-01), None
patent: 2003-224267 (2003-08-01), None

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