Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-29
2010-10-05
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27103
Reexamination Certificate
active
07808053
ABSTRACT:
Embodiments of the present invention provide apparatus, methods and systems that include a substrate including a central region and a peripheral region; a plurality of layers above a surface of the substrate, a first plurality of pitch-multiplied spacers on a top surface of the plurality of layer, the first plurality of pitch-multiplied spacers being above the central region of the substrate, and a second plurality of pitch-multiplied spacers on the top surface of the plurality of layers, the second plurality of pitch-multiplied spacers above the peripheral region and including at least one pitch-multiplied spacer having a surface at a distance from the at least one pitch multiplied spacer having a surface at the boundary.
REFERENCES:
patent: 6833575 (2004-12-01), Parekh et al.
patent: 7115525 (2006-10-01), Abatchev et al.
patent: 7151040 (2006-12-01), Tran et al.
patent: 7411255 (2008-08-01), Parekh et al.
patent: 2006/0046424 (2006-03-01), Chance et al.
patent: 2006/0138563 (2006-06-01), Park et al.
patent: 2006/0262511 (2006-11-01), Abatchev et al.
patent: 2006/0264001 (2006-11-01), Tran et al.
patent: 2007/0239920 (2007-10-01), Frid
Haller Gordon
Tran Luan C.
Cao Phat X
Intel Corporation
Schwegman Lundberg & Woessner, P.A.
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