Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-12-27
2010-02-16
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170, C365S185180, C365S185220, C365S185240
Reexamination Certificate
active
07663914
ABSTRACT:
A method of programming a multi bit flash memory device may perform a kthpreliminary verify read operation before performing a kthprogram operation according to a kthpage of program data, where n and k integers, n≧2, and 1≦k≦n. That is, where a (k−1)thprogram operation produces one or more expanded threshold voltage distribution regions due to the presence of fast cells, the kthpreliminary verify read operation may detect fast cells that have already reached their target threshold states without having had to undergo the kthprogram operation. The kthpreliminary verify read operation also may set the detected fast cells to have program-inhibit status so as to reduce or prevent undesired further programming of the detected fast cells that would otherwise occur during the kthprogram operation.
REFERENCES:
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5923587 (1999-07-01), Choi
patent: 5986929 (1999-11-01), Sugiura et al.
patent: 6353553 (2002-03-01), Tamada et al.
patent: 6400601 (2002-06-01), Sudo et al.
patent: 6987694 (2006-01-01), Lee
patent: 7035144 (2006-04-01), Kim et al.
patent: 7082056 (2006-07-01), Chen et al.
patent: 7102927 (2006-09-01), Jo
patent: 7139192 (2006-11-01), Wong
patent: 2006/0146433 (2006-07-01), Chan et al.
patent: 2006/0171210 (2006-08-01), Nagashima et al.
patent: 2009/0141556 (2009-06-01), Baik
patent: 07-161852 (1995-06-01), None
patent: 10-320987 (1998-12-01), None
patent: 2001-014873 (2001-01-01), None
patent: 2001-210082 (2001-08-01), None
patent: 2005-032431 (2005-02-01), None
patent: 10-1997-0029851 (1997-06-01), None
patent: 10-2004-0036015 (2004-04-01), None
patent: 10-2006-0007629 (2006-01-01), None
patent: 10-2007-0031594 (2007-03-01), None
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Yoha Connie C
LandOfFree
Method of programming a multi bit flash memory device to... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of programming a multi bit flash memory device to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of programming a multi bit flash memory device to... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4173861