Non-volatile memory with source/drains in multiple directions

Details Non-volatile memory with source/drains in multiple directions Non-volatile memory with source/drains in multiple directions

2007-06-26

2010-06-22

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S320000, C257SE29309

Reexamination Certificate

active

07741674

ABSTRACT:
An object is to improve a data recording amount per memory cell. In the invention, in a non-volatile memory, the data contents of which can be electrically written and erased, each memory cell that configures the non-volatile memory is provided with: source/drain regions formed on a semiconductor substrate; a gate electrode formed on a channel region of the semiconductor substrate; and a gate insulating film formed between the semiconductor substrate and the gate electrode. A configuration in which the source/drain regions extend at least in three directions from the channel region when seen on a plane from the gate electrode side is employed.

REFERENCES:
patent: 2003/0011007 (2003-01-01), Takashino
patent: 2005/0199912 (2005-09-01), Hofmann et al.
patent: 2001-512290 (2001-08-01), None

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