Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-27
2010-06-15
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S565000, C257S370000, C257SE21384, C257SE29040, C438S270000
Reexamination Certificate
active
07737490
ABSTRACT:
A vertical and trench type insulated gate MOS semiconductor device is provided in which the surfaces of p-type channel regions and the surfaces of portions of an n-type semiconductor substrate alternate in the longitudinal direction of the trench between the trenches arranged in parallel, and an n+-type emitter region selectively formed on the surface of the p-type channel region is wide by the side of the trench and becomes narrow toward the center point between the trenches. This enables the device to achieve low on-resistance and enhanced turn-off capability.
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Otsuki Masahito
Wakimoto Hiroki
Yoshikawa Koh
Fuji Electric Systems Co., Ltd.
Lam Cathy N
Nguyen Cuong Q
Rossi Kimms & McDowell LLP
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