Method for forming bumps on under bump metallurgy

Details Method for forming bumps on under bump metallurgy Method for forming bumps on under bump metallurgy

2008-08-27

2010-10-19

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S738000, C257S781000, C257SE21508, C257SE23021

Reexamination Certificate

active

07816252

ABSTRACT:
A method for forming a bump on under bump metallurgy according to the present invention is provided. A bonding pad is first formed on the active surface of a wafer. Subsequently, a passivation layer is formed on the active surface of the wafer and exposes the bonding pad. An under bump metallurgy is formed on the bonding pad. A layer of film is formed on the passivation layer and overlays the under bump metallurgy. Afterward, the portion of the film on the under bump metallurgy is exposed to a UV light and the exposed portion of the film is removed to expose the under bump metallurgy. A solder paste is applied to the under bump metallurgy and the remaining film on the wafer is removed. Finally, the solder paste is reflowed to form a spherical bump.

REFERENCES:
patent: 5418186 (1995-05-01), Park et al.
patent: 5767010 (1998-06-01), Mis et al.
patent: 5937320 (1999-08-01), Andricacos et al.
patent: 6293457 (2001-09-01), Srivastava et al.

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