Method for selectively etching a feature

Details Method for selectively etching a feature Method for selectively etching a feature

1991-04-12

1992-05-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156649, 156651, 156657, 1566591, 156668, 156646, B44C 122, B29C 3700

Patent

active

051164604

ABSTRACT:
A method is provided for selectively etching materials on a semiconductor wafer (10, 30) that have similar etch rates. The semiconductor wafer (10, 30) is provided with at least a first layer. An etch mask is provided on the first layer. The layer with the etch mask (13) is partially etched to a predetermined point. A polymer film (21, 38) is deposited on the partially etched layer. The polymer film (21, 38) is etched in an anisotropic manner creating open or clear areas (14, 34) in the horizontal polymer film, while leaving polymer coating (22, 37) on vertical walls (12, 36). The open areas (14, 34) are chemically etched, while the remaining polymer coating (22, 37) on the vertical walls (12, 36) protects the vertical walls (12, 36) from being chemically etched. This method also protects the top surface of the semiconductor wafer.

REFERENCES:
patent: 4604162 (1986-08-01), Sobczak
patent: 4657630 (1987-04-01), Agatsuma
patent: 4661374 (1987-04-01), Doering
patent: 4805683 (1989-02-01), Magdo et al.
patent: 4818714 (1989-04-01), Haskell
patent: 4838991 (1989-06-01), Cote et al.

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