Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-06
2010-11-16
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257SE29030, C257SE29129
Reexamination Certificate
active
07834390
ABSTRACT:
A nonvolatile semiconductor memory device has: a semiconductor substrate; a control gate and a floating gate that are formed side by side on a gate insulating film on a channel region in the semiconductor substrate; an erase gate facing an upper surface of the floating gate; a first device isolation structure having a first projecting portion; and a second device isolation structure having a second projecting portion. The first and second projecting portions have a first sloping surface and a second sloping surface, respectively. The first sloping surface and the second sloping surface face each other, and an interval between the first and second sloping surfaces becomes larger away from the semiconductor substrate. The floating gate is sandwiched between the first and second projecting portions and at least has a portion located on the semiconductor substrate side of the first and second sloping surfaces.
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U.S. Appl. No. 12/320,889, filed Feb. 6, 2009, NEC Electronics Corporation.
U.S. Appl. No. 12/320,890, filed Feb. 6, 2009, NEC Electronics Corporation.
Foley & Lardner LLP
Mandala Victor A
NEC Electronics Corporation
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