Method of forming a metal bump on a semiconductor device

Details Method of forming a metal bump on a semiconductor device Method of forming a metal bump on a semiconductor device

2009-05-06

2010-12-07

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C438S613000, C438S614000

Reexamination Certificate

active

07846831

ABSTRACT:
An uppermost one of multilayered electrode pads, on which a bump and a plating coat will be formed, is made of metal having high ionization tendency, particularly, Al. On the other hand, an uppermost one of multilayered electrode pads, on which none of the bump and the plating coat will be formed, is made of metal having low ionization tendency, particularly, Cu.

REFERENCES:
patent: 7452803 (2008-11-01), Lin et al.
patent: 2003/0052409 (2003-03-01), Matsuo et al.
patent: 2003/0153172 (2003-08-01), Yajima et al.
patent: 2006/0154469 (2006-07-01), Hess et al.
patent: 2001-332577 (2001-11-01), None
Wolf, S., Silicon Processing for the VLSI Era, vol. 4: Deep-Submicron Process Technology, Chapter 16, Copper Interconnect Process Technology, p. 711, 2002, Lattice Press, Sunset Beach, CA.

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