Small-pitch three-dimensional mask-programmable memory

Details Small-pitch three-dimensional mask-programmable memory Small-pitch three-dimensional mask-programmable memory

2007-11-06

2010-06-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

07728391

ABSTRACT:
The present invention discloses a small-pitch three-dimensional mask-programmable memory (SP-3DmM). It is an ultra-low-cost and ultra-high-density semiconductor memory. SP-3DmM comprises a mask-programmable memory level stacked above the substrate. This memory level comprises diodes but no transistors or antifuses. Its minimum line pitch is smaller than the minimum gate pitch of the substrate transistors.

REFERENCES:
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 5835396 (1998-11-01), Zhang
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6624485 (2003-09-01), Johnson
patent: 6717222 (2004-04-01), Zhang
patent: 6903427 (2005-06-01), Zhang
patent: 7386652 (2008-06-01), Zhang
patent: 7423304 (2008-09-01), Cleeves et al.
de Graaf et al, “A Novel High-Density Low-Cost Diode Programmable Read Only Memory” Technical Digest of International Electron Device Meeting, 1996.

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