Semiconductor device using SOI-substrate

Details Semiconductor device using SOI-substrate Semiconductor device using SOI-substrate

2008-12-16

2010-12-28

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C438S179000, C438S479000, C438S517000, C438S300000

Reexamination Certificate

active

07859063

ABSTRACT:
According to a feature of the present invention, a semiconductor device includes a SOI substrate, including a semiconductor substrate; an insulating layer formed on the semiconductor substrate and a silicon layer formed on the insulating layer. A drain region and a source region are formed in the silicon layer so that the source region is in contact with the insulating layer but the drain region is not in contact with the insulating layer.

REFERENCES:
patent: 2003/0211713 (2003-11-01), Suguro et al.
patent: 2006/0049467 (2006-03-01), Lim et al.
patent: 2006/0125041 (2006-06-01), Yang et al.
patent: 2007/0184611 (2007-08-01), Oh et al.
patent: 2005-150402 (2005-06-01), None
patent: 2006-165505 (2006-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device using SOI-substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device using SOI-substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device using SOI-substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4169743