Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2008-08-29
2010-10-26
Thai, Luan C (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S629000, C257SE21596, C257SE21599
Reexamination Certificate
active
07821104
ABSTRACT:
A package device has a package substrate, a semiconductor die on the package substrate, and a molding compound on the package substrate and over the semiconductor die. The semiconductor die has a last passivation layer, an active circuit region in an internal portion of the die, an edge seal region along a periphery of the die, and a structure over the edge seal region extending above the last passivation layer, covered by the molding compound, and comprising a polymer material. The structure may extend at least five microns above the last passivation layer. The structure stops cracks in the molding compound from reaching the active circuit region. The cracks, if not stopped, can reach wire bonds in the active region and cause them to fail.
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Ding Min
Hess Kevin J.
Lee Chu-Chung
Su Peng
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Thai Luan C
Vo Kim-Marie
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