Thin film solar cell and its fabrication

Details Thin film solar cell and its fabrication Thin film solar cell and its fabrication

2008-10-08

2010-11-23

Ridley, Basia (Department: 1795)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S097000, C438S486000, C438S491000, C438S513000, C136S255000, C136S258000, C136S261000

Reexamination Certificate

active

07838442

ABSTRACT:
A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.

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