Method of forming metal-oxide-semiconductor transistor

Details Method of forming metal-oxide-semiconductor transistor Method of forming metal-oxide-semiconductor transistor

2010-06-21

2010-12-28

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C257S415000

Reexamination Certificate

active

07858421

ABSTRACT:
A method of forming a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate is prepared first, and the semiconductor substrate has agate structure, a source region and a drain region. Subsequently, a stress buffer layer is formed on the semiconductor substrate, and covers the gate structure, the source region and the drain region. Thereafter, a stressed cap layer is formed on the stress buffer layer, and a tensile stress value of the stressed cap layer is higher than a tensile stress value of the stress buffer layer. Since the stress buffer layer can prevent the stressed cap layer from breaking, the MOS transistor device can be covered by a stressed cap layer having an extremely high tensile stress value in the present invention.

REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 7442597 (2008-10-01), Tsui
patent: 7777284 (2010-08-01), Chen et al.

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