Method of fabricating CMOS devices using fluid-based...

Details Method of fabricating CMOS devices using fluid-based... Method of fabricating CMOS devices using fluid-based...

2005-12-21

2010-06-15

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S522000, C257SE21573

Reexamination Certificate

active

07737020

ABSTRACT:
Fluid-based dielectric material is used to backfill multiple patterned metal layers of an IC on a wafer. The patterned metal layers are fabricated using conventional CMOS techniques, and are IMD layers in particular embodiments. The dielectric material(s) are etched out of the IC to form a metal network, and fluid dielectric material precursor, such as a polyarylene ether-based resin, is applied to the wafer to backfill the metal network with low-k fluid-based dielectric material.

REFERENCES:
patent: 6413852 (2002-07-01), Grill et al.
patent: 6413854 (2002-07-01), Uzoh et al.
patent: 6534868 (2003-03-01), Sekiguchi
patent: 6984892 (2006-01-01), Gotkis et al.
patent: 2003/0209805 (2003-11-01), Choi et al.
patent: 2003/0219968 (2003-11-01), Adem et al.
patent: 2005/0067701 (2005-03-01), Coolbaugh et al.
patent: 2005/0215047 (2005-09-01), Daamen et al.
patent: 2005/0230836 (2005-10-01), Clarke et al.

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