Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2007-11-02
2010-11-16
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
Reexamination Certificate
active
07833884
ABSTRACT:
A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate is provided. The method includes first providing a structure that includes a substrate, a doped and relaxed semiconductor layer on the substrate, and a strained semiconductor layer on the doped and relaxed semiconductor layer. In the invention, the doped and relaxed semiconductor layer having a lower lattice parameter than the substrate. Next, at least the doped and relaxed semiconductor layer is converted into a buried porous layer and the structure including the buried porous layer is annealed to provide a strained semiconductor-on-insulator substrate. During the annealing, the buried porous layer is converted into a buried oxide layer.
REFERENCES:
patent: 7172930 (2007-02-01), Adam et al.
patent: 2004/0245571 (2004-12-01), Cheng et al.
patent: 2005/0056352 (2005-03-01), Bedell et al.
patent: 2006/0003555 (2006-01-01), Adam et al.
patent: 2006/0081837 (2006-04-01), Bedell et al.
patent: 2006/0157706 (2006-07-01), Zhu et al.
patent: 2007/0111463 (2007-05-01), Adam et al.
patent: 2007/0164356 (2007-07-01), Adam et al.
patent: WO2004/073043 (2004-08-01), None
Matthews, J.W., “Defects associated with the accomodation of misfit between crystals” J. Vac. Sci. Technol., vol 12, No. 1, Jan./Feb. 1975 126-133.
Bedell Stephen W.
de Souza Joel P.
Reznicek Alexander
Sadana Devendra K.
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
Smith Bradley K
LandOfFree
Strained semiconductor-on-insulator by Si:C combined with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Strained semiconductor-on-insulator by Si:C combined with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained semiconductor-on-insulator by Si:C combined with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4163207