Method for forming PECVD silicon nitride film

Details Method for forming PECVD silicon nitride film Method for forming PECVD silicon nitride film

2007-07-31

2010-02-23

Meeks, Timothy H (Department: 1792)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

Reexamination Certificate

active

07666480

ABSTRACT:
A method for forming a silicon nitride film in a PECVD batch type chamber is provided. In the PECVD silicon nitride film deposition method, as the number of batches of processed wafers increases, a silicon nitride deposition time is gradually adjusted to be longer as each batch of wafers is processed. Therefore a uniform thickness of the silicon nitride film is maintained despite variations in deposition rates resulting from an RF plasma cleaning process.

REFERENCES:
patent: 5041311 (1991-08-01), Tsukune et al.
patent: 2006/0121194 (2006-06-01), Aiso

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