Semiconductor structure formed using a sacrificial structure

Details Semiconductor structure formed using a sacrificial structure Semiconductor structure formed using a sacrificial structure

2007-10-30

2010-06-22

Zameke, David A (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257SE23151

Reexamination Certificate

active

07741702

ABSTRACT:
A semiconductor structure is provided which eliminates the contact resistance traditionally associated with a junction between one or more contacts and a buried conductive structure formed in the semiconductor structure. The semiconductor structure includes a first insulating layer formed on a semiconductor layer and a conductive structure formed on at least a portion of the first insulating layer. A second insulating layer is formed on at least a portion of the conductive structure. At least one contact is formed through the second insulating layer and electrically connected to the conductive structure. The contact and the conductive structure are formed as a substantially homogeneous structure in a same processing step.

REFERENCES:
patent: 2002/0066942 (2002-06-01), Opolka et al.

Affiliated with

Also associated with

Rating

Semiconductor structure formed using a sacrificial structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure formed using a sacrificial structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure formed using a sacrificial structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4162691