Multi-bit STRAM memory cells

Details Multi-bit STRAM memory cells Multi-bit STRAM memory cells

2008-10-21

2010-11-16

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257SE27104, C257SE29164

Reexamination Certificate

active

07834385

ABSTRACT:
A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.

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U.S. Appl. No. 12/200,034, filed Aug. 28, 2008, Inventors: Xi et al.

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