Method for forming metal line in semiconductor device

Details Method for forming metal line in semiconductor device Method for forming metal line in semiconductor device

2008-10-08

2010-12-28

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S683000

Reexamination Certificate

active

07858515

ABSTRACT:
A method for forming a metal line in a semiconductor device may include forming a silicon (Si) monolayer as an etching prevention layer over an exposed portion of a lower metal layer and sidewalls of an upper metal layer, middle metal layer, and the entire surface of curved photoresist patterns.

REFERENCES:
patent: 6133145 (2000-10-01), Chen
patent: 6169029 (2001-01-01), Yang
patent: 6599829 (2003-07-01), Smith et al.
patent: 6958294 (2005-10-01), Smith et al.
patent: 7001843 (2006-02-01), Park
patent: 7001848 (2006-02-01), Smith et al.
patent: 7279415 (2007-10-01), Frohberg et al.
patent: 10-2005-0015116 (2005-02-01), None
patent: 10-2006-0072217 (2006-06-01), None

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