Polymer having antireflective properties, hardmask...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S317000, C430S323000, C430S271100, C430S272100, C528S205000, C528S212000, C528S219000, C525S481000, C525S494000, C525S491000, C525S492000

Reexamination Certificate

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07655386

ABSTRACT:
An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C:In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and R1is methylene or includes a non-fluorene-containing aryl linking group.

REFERENCES:
patent: 2006/0251990 (2006-11-01), Uh et al.
patent: 2007/0287821 (2007-12-01), Doetz et al.
patent: 2008/0255315 (2008-10-01), Ogura et al.
patent: WO-2006/025429 (2006-03-01), None

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