Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-02-15

2010-06-01

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C257SE21664, C257SE21008

Reexamination Certificate

active

07728368

ABSTRACT:
According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a lower electrode film formed on the semiconductor substrate, a dielectric film formed on the lower electrode film, and an upper electrode film formed on the dielectric film, wherein the lower electrode film, the dielectric film and the upper electrode film construct a capacitor in a predetermined region on the semiconductor substrate, the dielectric film is separated from the upper electrode film outside the predetermined region, and the dielectric film is formed continuously with respect to an adjacent cell.

REFERENCES:
patent: 6635495 (2003-10-01), Hashimoto et al.
patent: 6762802 (2004-07-01), Ono et al.
patent: 6812042 (2004-11-01), Kim et al.
patent: 2005/0006680 (2005-01-01), Song et al.
patent: 2004-311941 (2004-11-01), None
patent: 2004-342974 (2004-12-01), None

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