Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-02-28
2010-10-26
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257SE21626, C257SE21640
Reexamination Certificate
active
07820539
ABSTRACT:
A method for making a semiconductor device is provided. In accordance with the method, a semiconductor structure is provided which comprises (a) a substrate (203), (b) first (219) and second (220) gate electrodes disposed over the substrate, and (c) first (223) and second (225) sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively. A first layer of photoresist (231) is disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered. The structure is then subjected to an etch which etches the first layer of photoresist and a portion of the first and second sets of spacer structures.
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Crawford Latanya
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Landau Matthew C
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