Method of manufacturing bonded wafer

Details Method of manufacturing bonded wafer Method of manufacturing bonded wafer

2008-03-28

2010-12-21

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S515000, C257SE21317, C257SE21306

Reexamination Certificate

active

07855132

ABSTRACT:
The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bonding a base wafer and the active layer wafer directly or through an insulating layer to form a bonded wafer, heat treating the bonded wafer to strengthen the bond and convert the oxygen ion implantation layer into a stop layer, grinding, polishing, and/or etching, from the active layer wafer surface side, the bonded wafer in which the bond has been strengthened to expose the stop layer on a surface of the bonded wafer, removing the stop layer, and subjecting the bonded wafer from which the stop layer has been removed to a heat treatment under a reducing atmosphere to diffuse an electrically conductive component comprised in the active layer wafer.

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Korean Office Action dated Feb. 11, 2010 that issued with respect to patent family member Korean Patent Application No. 10-2008-0030759, along with an English language translation.
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