Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-03-20
2010-11-16
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21241
Reexamination Certificate
active
07833913
ABSTRACT:
A method is provided for forming doped hafnium zirconium based films by atomic layer deposition (ALD) or plasma enhanced ALD (PEALD). The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a hafnium precursor, a gas pulse containing a zirconium precursor, and a gas pulse containing one or more dopant elements. The dopant elements may be selected from Group II, Group XIII, silicon, and rare earth elements of the Periodic Table. Sequentially after each precursor and dopant gas pulse, the substrate is exposed to a gas pulse containing an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas. In alternative embodiments, the hafnium and zirconium precursors may be pulsed together, and either or both may be pulsed with the dopant elements. The sequential exposing steps may be repeated to deposit a doped hafnium zirconium based film with a predetermined thickness.
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Coleman W. David
Kim Sun M
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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