Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-23
2010-11-23
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S546000
Reexamination Certificate
active
07838924
ABSTRACT:
An integrated circuit (25) formed at a semiconducting surface of a substrate including a common p-layer (38) includes functional circuitry (24) formed on the p-layer (38) including a plurality of terminals (IN, OUT, I/O) coupled to the functional circuitry (24). At least one ESD protection cell (30; in more detail200) is connected to at least one of the plurality of terminals of the functional circuitry (24). The protection cell includes at least a first Nwell (37) formed in the p-layer (38), a p-doped diffusion (36) within the first Nwell (37) to form at least one Nwell diode comprising an anode (37) and a cathode (36). An NMOS transistor200is formed in or on the p-layer (38) comprising a n+ source (43), n+drain (44) and a channel region comprising a p-region (41) between the source and drain, and a gate electrode (45) on a gate dielectric (46) on the channel region. The terminal of the functional circuit (24, PAD) is coupled to the cathode (36) of the Nwell diode, and the anode (37) of the Nwell diode is connected in series with a path from the drain (44) to the source (43) of the NMOS transistor (200).
REFERENCES:
patent: 6624487 (2003-09-01), Kunz et al.
patent: 6696708 (2004-02-01), Hou et al.
patent: 6713841 (2004-03-01), Gossner
patent: 7282767 (2007-10-01), Duvvury et al.
patent: 2008/0067615 (2008-03-01), Kim
Boselli Gianluca
Duvvury Charvaka
Brady III Wade J.
Franz Warren L.
Richards N Drew
Sun Yu-Hsi
Telecky , Jr. Frederick J.
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