Shielded trace structure and fabrication method

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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Details

C029S882000, C029S846000, C029S842000, C029S829000

Reexamination Certificate

active

07832097

ABSTRACT:
A method includes forming a patterned sacrificial layer on a first carrier and a patterned trace layer on the patterned sacrificial layer. The patterned sacrificial layer and the patterned trace layer are laminated to a dielectric material. The first carrier and the patterned sacrificial layer are removed creating sacrificial layer gaps above the patterned trace layer. The sacrificial layer gaps are filled with a trace layer isolation dielectric material. Shield trenches are laser-ablated within the dielectric material and on opposite sides of a signal trace of the patterned trace layer. The shield trenches are filled with an electrically conductive material to form shield walls. The electrically conductive material is patterned to form a shield top. The shield top, the shield walls, and a second carrier form a bias shield around the signal trace.

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