Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-01
2010-12-07
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000
Reexamination Certificate
active
07847345
ABSTRACT:
There is provided a structure wherein an emitter layer3is provided in the region A on the first major surface side of a semiconductor substrate1, and emitter layer3is not provided in the region b. There is provided a structure wherein a collector P layer5is provided in the region A on the second major surface side of a semiconductor substrate1, and a cathode N layer4is provided in the region B. Specifically, there is provided a structure wherein IGBTs are composed in the region A, and diodes are composed in the region B. By the above-described structure, ON characteristics when the gate is turned on can be improved while suppressing the elevation of the forward voltage Vf and the recovery current of the diodes.
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Mitsubishi Electric Corporation
Nguyen Cuong Q
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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