Process for manufacturing semiconductor integrated circuit...

Details Process for manufacturing semiconductor integrated circuit... Process for manufacturing semiconductor integrated circuit...

2008-05-27

2010-02-09

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S691000, C438S716000, C438S906000, C257SE21214, C257SE21229

Reexamination Certificate

active

07659201

ABSTRACT:
In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

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