Solid-state imaging device and method of manufacturing the same

Details Solid-state imaging device and method of manufacturing the same Solid-state imaging device and method of manufacturing the same

2007-07-12

2010-12-21

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000, C257S258000, C257SE27133

Reexamination Certificate

active

07855406

ABSTRACT:
An n/p−/p+substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

REFERENCES:
patent: 5283460 (1994-02-01), Mita
patent: 6380603 (2002-04-01), Takimoto et al.
patent: 6403998 (2002-06-01), Inoue
patent: 6433374 (2002-08-01), Fukunaga et al.
patent: 6469365 (2002-10-01), Werner
patent: 6885047 (2005-04-01), Shinohara et al.
patent: 7091536 (2006-08-01), Rhodes et al.
patent: 7456453 (2008-11-01), Inoue
patent: 7473945 (2009-01-01), Takahashi et al.
patent: 2003/0127667 (2003-07-01), Inoue et al.
patent: 2005/0173742 (2005-08-01), Ihara
patent: 2005/0218436 (2005-10-01), Yamaguchi et al.
patent: 2006/0132632 (2006-06-01), Ihara
patent: 2006/0219867 (2006-10-01), Yamaguchi et al.
patent: 2007/0045679 (2007-03-01), McKee et al.
patent: 2001-160620 (2001-06-01), None
patent: 2001-223351 (2001-08-01), None
patent: 2006-286933 (2006-10-01), None
U.S. Appl. No. 11/874,479, filed Oct. 18, 2007, Inoue.
U.S. Appl. No. 12/725,625, filed Mar. 17, 2010, Yamaguchi.

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