Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-17
2010-12-28
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S159000, C438S161000, C438S163000, C438S669000, C257SE21017, C257SE21020, C257SE21028
Reexamination Certificate
active
07858451
ABSTRACT:
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.
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Korea Office Action (Application No. 10-2008-0122616) dated Aug. 14, 2009 with English Translation.
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Korean Office Action (Application No. 2010-0018683;KR08516D3) Dated Sep. 29, 2010.
Kuwabara Hideaki
Maekawa Shinji
Ahmadi Mohsen
Costellia Jeffrey L.
Garber Charles D
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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