True CSP power MOSFET based on bottom-source LDMOS

Details True CSP power MOSFET based on bottom-source LDMOS True CSP power MOSFET based on bottom-source LDMOS

2008-12-29

2010-12-14

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S341000, C257S343000, C257SE29118, C257SE29198, C438S268000, C438S273000

Reexamination Certificate

active

07851856

ABSTRACT:
A semiconductor package may comprise a semiconductor substrate, a MOSFET device having a plurality cells formed on the substrate, and a source region common to all cells disposed on a bottom of the substrate. Each cell comprises a drain region on a top of the semiconductor device, a gate to control a flow of electrical current between the source and drain regions, a source contact proximate the gate; and an electrical connection between the source contact and source region. At least one drain connection is electrically coupled to the drain region. Source, drain and gate pads are electrically connected to the source region, drain region and gates of the devices. The drain, source and gate pads are formed on one surface of the semiconductor package. The cells are distributed across the substrate, whereby the electrical connections between the source contact of each device and the source region are distributed across the substrate.

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