Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-08-30

2010-12-14

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07851874

ABSTRACT:
A semiconductor device according to an embodiment includes device isolating layers having a top surface lower than a sheet height of a semiconductor substrate; a gate insulating layer and a gate electrode sequentially stacked on the upper surface of an active region of the semiconductor substrate between the device isolating layers; a spacer formed at the side wall of the gate electrode; a source/drain region formed in the semiconductor substrate between the spacer and the device isolating layers; and a silicide film formed on the source/drain region.

REFERENCES:
patent: 7074683 (2006-07-01), Hwang et al.
patent: 2003/0113973 (2003-06-01), Chu
patent: 2005/0127468 (2005-06-01), Ito
patent: 2006/0148164 (2006-07-01), Park
patent: 2007/0187727 (2007-08-01), Ting et al.
patent: 10-1996-0029326 (1998-04-01), None
patent: 10-1996-0075441 (1998-09-01), None
patent: 10-2002-0040699 (2004-01-01), None

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