Memory having a vertical access device

Details Memory having a vertical access device Memory having a vertical access device

2007-01-22

2010-12-28

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000

Reexamination Certificate

active

07859050

ABSTRACT:
Semiconductor memory devices having vertical access devices are disclosed. In some embodiments, a method of forming the device includes providing a recess in a semiconductor substrate that includes a pair of opposed side walls and a floor extending between the opposed side walls. A dielectric layer may be deposited on the side walls and the floor of the recess. A conductive film may be formed on the dielectric layer and processed to selectively remove the film from the floor of the recess and to remove at least a portion of the conductive film from the opposed sidewalls.

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“European Application Serial No. 08724673.2, Office Action mailed Mar. 31, 2010”, 4 pgs.

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