Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-07-13
2010-12-21
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S633000, C438S637000, C438S638000, C438S639000, C438S640000, C438S650000, C257SE21582, C257SE21585, C257SE21621, C257SE21641
Reexamination Certificate
active
07855141
ABSTRACT:
A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.
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H. Sayama, et al. “80 NM CMOSFET Technology Using Double Offset-Implanted Source/Drain Extension and Low Temperature SiN Process” IEDM, pp. 239-242.
Miyajima Hideshi
Shibata Hideki
Shimooka Yoshiaki
Tomioka Kazuhiro
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Long K
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