Silicon wafer for IGBT and method for producing same

Details Silicon wafer for IGBT and method for producing same Silicon wafer for IGBT and method for producing same

2007-10-24

2010-12-07

Rao, G. Nagesh (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S020000, C117S021000, C117S041000

Reexamination Certificate

active

07846252

ABSTRACT:
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017atoms/cm3by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

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