Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-02-27

2010-02-23

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000, C257SE27062, C257SE29064

Reexamination Certificate

active

07667274

ABSTRACT:
A semiconductor device is disclosed, which comprises a silicon substrate, a complementary MISFET circuit, an insulation film formed on the silicon substrate, a first contact hole formed in the insulation film, a first metal silicide layer formed on the bottom of the first contact hole, the first metal silicide layer being provided by a reaction of the n-channel impurity diffused region of the n-channel MISFET with a first metal, a second contact hole formed in the insulation film, a second metal silicide layer formed on the bottom of the second contact hole, the second metal silicide layer being provided by a reaction of the p-channel impurity diffused region of the p-channel MISFET with a second metal, and a work function of the second metal silicide layer being higher than that of the first metal silicide layer.

REFERENCES:
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patent: 5705826 (1998-01-01), Aratani et al.
patent: 6465887 (2002-10-01), Chu et al.
patent: 7459756 (2008-12-01), Lin et al.
patent: 2003/0162389 (2003-08-01), Wieczorek et al.
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patent: 2000-286411 (2000-10-01), None
patent: 2001-250792 (2001-09-01), None
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Machine Translation of JP 2002-094058, 44 pages.
Notification of Reasons for Rejection dated Apr. 22, 2005, issued by the Japanese Patent Office in counterpart Japanese Application No. 2002-323493.

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