Semiconductor device with field shield isolation structure and a

Details Semiconductor device with field shield isolation structure and a Semiconductor device with field shield isolation structure and a

1994-06-13

1996-09-17

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257506, H01L 2900

Patent

active

055571352

ABSTRACT:
To electrically isolate a MOSFET formed on a substrate from an electrical device, a field shield electrode is buried in a substrate between the MOSFET and the electrical device so that the bottom surface of the field shield electrode is at a level deeper than each of depth levels of diffusion layers of the MOSFET and the electric device. To provide such an electrode, a trench is formed in a substrate at a level deeper than the depth levels of the diffusion layers of both the MOSFET and the electric device. After insulating an entire inner surface of the trench, an field shield electrode is buried and exposed surface of the electrode is covered with an insulating film.

REFERENCES:
patent: 4493740 (1985-01-01), Komeda
patent: 4825278 (1989-04-01), Hillenius et al.
patent: 4925805 (1990-05-01), van Ommen et al.
patent: 5097310 (1992-03-01), Eimori et al.

Affiliated with

Also associated with

Rating

Semiconductor device with field shield isolation structure and a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with field shield isolation structure and a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with field shield isolation structure and a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-415207