Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-12-29
2010-02-16
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C361S303000, C257SE21664, C257SE21011, C438S399000
Reexamination Certificate
active
07663170
ABSTRACT:
A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOxfilm containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOxfilm containing columnar crystals is formed.
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Fujitsu Microelectronics Limited
Taylor Earl N
Vu David
Westerman Hattori Daniels & Adrian LLP
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