Semiconductor MOSFET device having a shallow nitrogen implanted

Details Semiconductor MOSFET device having a shallow nitrogen implanted Semiconductor MOSFET device having a shallow nitrogen implanted

1995-05-25

1996-09-17

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257607, 257655, 257339, 437 97, H01L 31062

Patent

active

055571298

ABSTRACT:
A boron diffusion region is formed at a surface of a silicon substrate. A pair of n-type source/drain regions are formed at a surface of boron diffusion region. A gate electrode is formed at a region located between paired source/drain regions with a gate insulating film therebetween. A nitrogen implanted region is formed at the surface of silicon substrate located between paired n-type source/drain regions. Nitrogen implanted region has a peak nitrogen concentration at a position of a depth not exceeding 500 .ANG. from the surface of silicon substrate. Thereby, a transistor structure which can be easily miniaturized can be obtained.

REFERENCES:
patent: 4755865 (1988-07-01), Wilson et al.

Affiliated with

Also associated with

Rating

Semiconductor MOSFET device having a shallow nitrogen implanted does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor MOSFET device having a shallow nitrogen implanted , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor MOSFET device having a shallow nitrogen implanted will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-415181