Lithography system and projection method

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S492100, C250S492200, C378S034000

Reexamination Certificate

active

07842936

ABSTRACT:
The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.

REFERENCES:
patent: 4498010 (1985-02-01), Biechler et al.
patent: 5103101 (1992-04-01), Berglund et al.
patent: 5369282 (1994-11-01), Arai et al.
patent: 5393987 (1995-02-01), Abboud et al.
patent: 6433348 (2002-08-01), Abboud et al.
patent: 6565386 (2003-05-01), Yoneyama et al.
patent: 2004/0135983 (2004-07-01), Wieland et al.
patent: 2005/0104013 (2005-05-01), Stengl et al.
patent: 2008/0054184 (2008-03-01), Knippelmeyer et al.
patent: WO 2004/038509 (2004-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Lithography system and projection method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lithography system and projection method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithography system and projection method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4151782

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.