Method to form a photovoltaic cell comprising a thin lamina

Semiconductor device manufacturing: process – Semiconductor substrate dicing

Reexamination Certificate

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C438S459000, C438S507000, C438S458000, C438S455000, C438S057000, C257SE21001, C257SE31001

Reexamination Certificate

active

07842585

ABSTRACT:
A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

REFERENCES:
patent: 3480473 (1969-11-01), Tanos
patent: 4144096 (1979-03-01), Wada et al.
patent: 4171997 (1979-10-01), Irmler
patent: 4174561 (1979-11-01), House et al.
patent: 4200472 (1980-04-01), Chappell et al.
patent: 4450316 (1984-05-01), Hamakawa et al.
patent: 4578526 (1986-03-01), Nakano et al.
patent: 4830038 (1989-05-01), Anderson et al.
patent: 4897123 (1990-01-01), Mitsui
patent: 5273911 (1993-12-01), Sasaki et al.
patent: 5279682 (1994-01-01), Wald et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5626688 (1997-05-01), Probst et al.
patent: 5966620 (1999-10-01), Sakaguchi et al.
patent: 5985742 (1999-11-01), Henley et al.
patent: 6048411 (2000-04-01), Henley et al.
patent: 6107213 (2000-08-01), Tayanaka
patent: 6146979 (2000-11-01), Henley et al.
patent: 6184111 (2001-02-01), Henley et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6229165 (2001-05-01), Sakai et al.
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6530653 (2003-03-01), Le et al.
patent: 6563133 (2003-05-01), Tong
patent: 6690014 (2004-02-01), Gooch et al.
patent: 7019339 (2006-03-01), Atwater, Jr. et al.
patent: 7238622 (2007-07-01), Atwater, Jr. et al.
patent: 7462774 (2008-12-01), Roscheisen et al.
patent: 2004/0200520 (2004-10-01), Mulligan et al.
patent: 2007/0135013 (2007-06-01), Faris
patent: 2007/0235074 (2007-10-01), Henley et al.
patent: 2007/0277874 (2007-12-01), Dawson-Elli et al.
patent: 2008/0023061 (2008-01-01), Clemens et al.
patent: 2008/0070340 (2008-03-01), Borrelli et al.
patent: 2008/0160661 (2008-07-01), Henley
patent: 2008/0179547 (2008-07-01), Henley
patent: 2008/0188011 (2008-08-01), Henley
patent: 2003017723 (2003-01-01), None
Singh, Jasprit; Semiconductor Devices: Basic Principles; Chapter 7; John Wiley copyright 2001.
Agarwal et al. in “Efficient production of silicon-on-insulator films by co-implantation of He+ with H+”, Amer. Inst. of Physics, vol. 72, No. 9, pp. 1086-1088, Mar. 1998.
De Ceuster et al., “Low Cost, high volume production of >22% efficiency silicon solar cells,” Proc. 22nd EUPVSEC, 2007, p. 816-819.
Mulligan et al., “Reducing Silicon Consumption by Leveraging Cell Efficiency,” Proc. 21st EUPVSEC, 2006, pp. 1301-1302.
Mulligan et al., “Manufacture of Solar Cells with 21% Efficency,” http://www.sunpowercorp.com/Smarter-Solar/the-SunPower-Advantage/-/media/Downloads/smarter—solar/bmpaper.ashx.
Saadatmand et ar., “Radiation Emission from Ion Implanters When Implanting Hydrogen and Deuterium,” Proc. 1998 Intl. Conf. on Ion Implantation Tech., pp. 292-295, 1999.
Griggs et al., “Design Approaches and Materials Processes for Ultrahigh Efficiency Lattice Mismatched Multi-junction Solar Cells,” Proc. 4th WCPEC, Waikoloa, HA, 2006.
Smith et al., “Review of Back Contact Silicon Solar Cells for Low Cost Application,” 16th EUPVSEC, 2000.
Taguchi et al., “An approach for the higher efficiency of HIT cells,” Proc. IEEE-31, 31st IEEE Photovoltaics Spec. Conf. , Orlando, USA, Jan. 2005.
Zhao et al., “Twenty-four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss,” Appl Phys. Lett. 66 (26) Jun. 1995.
Office action cited Jan. 26, 2010 for U.S. Appl. No. 12/026,503.
Office Action dated Aug. 30, 2009 for U.S. Appl. No. 12/026,530.
Office Action dated Oct. 8, 2009 for U.S. Appl. No. 12/208,298.
Office Action dated Oct. 29, 2009 for U.S. Appl. No. 12/208,396.
Office Action dated Jul. 13, 2009 for U.S. Appl. No. 12/209,364.
Poortmans, Jeff et al., “Thin Film Solar Cells: Fabrication, Characterization and applications”, 2006, John Wiley & Sons Ltd, p. 72.
Tihu Wang, NREL (National Renewable Energy Laboratory) of US Department of Energy.
Office Action dated Mar. 12, 2010 for U.S. Appl. No. 12/208,298.
Office Action dated Mar. 25, 2010 for U.S. Appl. No. 12/208,396.
Office Action dated Feb. 8, 2010 for U.S. Appl. No. 12/209,364.
Office Action dated Apr. 1, 2010 for U.S. Appl. No. 12/189,157.
Amin, Nowshad et al., “Highly Efficient 1 Micron Thick CdTe Solar Cells with Textured TCOs”, 2001, Solar Energy Materials & Solar Cells, 67, pp. 195-201.
Office Action dated Jul. 12, 2010 for U.S. Appl. No. 12/208,298.

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