Semiconductor device with high capacitance and low leakage...

Details Semiconductor device with high capacitance and low leakage... Semiconductor device with high capacitance and low leakage...

2008-07-14

2010-10-12

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29345, C438S197000, C438S510000

Reexamination Certificate

active

07812378

ABSTRACT:
A semiconductor device includes a first MOS type capacitor having a first insulating film and a first electrode that are formed on a semiconductor substrate, and a second MOS type capacitor having a second insulating film and a second electrode that are formed on the semiconductor substrate. The first electrode has a first concentration difference as a difference when an impurity concentration in an interface region with the first insulating film is subtracted from an impurity concentration in a top portion of the first electrode. The second electrode has a second concentration difference as a difference when an impurity concentration in an interface region with the second insulating film is subtracted from an impurity concentration in a top portion of the second electrode. The second concentration difference is larger than the first concentration difference.

REFERENCES:
patent: 6486012 (2002-11-01), Ono
patent: 2002/0113294 (2002-08-01), Rhee et al.
patent: 2005/0048708 (2005-03-01), Yamada et al.
patent: 2006/0065934 (2006-03-01), Okayama et al.
patent: 05-291538 (1993-11-01), None
patent: 2000-195966 (2000-07-01), None
patent: 2002-343879 (2002-11-01), None

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