Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

Filed on

2007-11-19

Date issued

2010-06-29

Examiner

Tran, Long K (Department: 2818)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S296000, C257S308000, C257S309000, C257SE27089, C257SE27103, C257SE27104

Type

Reexamination Certificate

Status

active

Patent number

07745868

Description

ABSTRACT:
A semiconductor device may include a MOS transistor having source and drain regions in a semiconductor substrate, a first inter-layer insulator having first contact holes that reach the source and drain regions over the MOS transistor. Cell contact plugs in the first contact holes contact with the source and drain regions. A second inter-layer insulator over the first inter-layer insulator and the cell contact plugs has second contact holes that reach the cell contact plugs. Contact plugs each have first and second portions. The first portion is in the second contact hole. The second portion extends over the first second inter-layer insulator. Metal barrier layers cover the upper surfaces of the second portions of the contact plugs. Capacitors each have a bottom electrode layer, a capacitive insulating layer and a top electrode layer. The bottom electrode layers each have a contact portion that contacts with the metal barrier layer.

REFERENCES:
patent: 7244982 (2007-07-01), Natsume et al.
patent: 7449739 (2008-11-01), Heitmann et al.
patent: 11-017143 (1999-01-01), None
patent: 11-068041 (1999-03-01), None
patent: 2000-315778 (2000-11-01), None
patent: 2002-83881 (2002-03-01), None
patent: 2002-252337 (2002-09-01), None
patent: 2005-064466 (2005-03-01), None

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