Semiconductor device with increased breakdown voltage

Details Semiconductor device with increased breakdown voltage Semiconductor device with increased breakdown voltage

2006-10-16

2010-12-21

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S339000

Reexamination Certificate

active

07855414

ABSTRACT:
Optimization of the implantation structure of a metal oxide silicon field effect transistor (MOSFET) device fabricated using conventional complementary metal oxide silicon (CMOS) logic foundry technology to increase the breakdown voltage. The techniques used to optimize the implantation structure involve lightly implanting the gate region, displacing the drain region from the gate region, and implanting P-well and N-well regions adjacent to one another without an isolation region in between.

REFERENCES:
patent: 6034388 (2000-03-01), Brown et al.
patent: 6211552 (2001-04-01), Efland et al.
patent: 6580156 (2003-06-01), Ito et al.
patent: 6700176 (2004-03-01), Ito et al.
patent: 6798684 (2004-09-01), Low et al.
patent: 6960819 (2005-11-01), Chen et al.
patent: 7161213 (2007-01-01), Ito et al.
patent: 7405446 (2008-07-01), Agam et al.
patent: 2003/0127689 (2003-07-01), Hebert
patent: 2004/0157379 (2004-08-01), Ito et al.
patent: 2005/0052892 (2005-03-01), Low et al.
patent: 2005/0236666 (2005-10-01), Wang
patent: 2006/0124999 (2006-06-01), Pendharkar
patent: 2006/0261408 (2006-11-01), Khemka et al.
patent: 2008/0036033 (2008-02-01), Ito et al.
patent: 2008/0246080 (2008-10-01), Ito et al.

Affiliated with

Also associated with

Rating

Semiconductor device with increased breakdown voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with increased breakdown voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with increased breakdown voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4151074