Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-07-22
2010-11-30
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S288000, C257S368000, C257SE29135, C257SE29136, C257SE29152
Reexamination Certificate
active
07842981
ABSTRACT:
A semiconductor device includes an active region extending along a first direction on a semiconductor substrate, the active region having a first sidewall and a second sidewall spaced apart and facing each other, a distance between the first and second sidewalls extending along a second direction, and a gate on the active region, the gate having a pair of body portions extending along the second direction and being spaced apart from each other, the second direction being perpendicular to the first direction, a head portion extending along the first direction to connect the body portions, the head portion overlapping a portion of the first sidewall, and a plurality of tab portions protruding from sidewalls of the body portions, the tab portions extending along the first direction and overlapping a portion of the second sidewall.
REFERENCES:
patent: 2007/0029619 (2007-02-01), Kim et al.
patent: 10-0608374 (2006-07-01), None
patent: 10-2006-0105161 (2006-10-01), None
patent: 10-2007-0016860 (2007-02-01), None
Kim Sung-Jin
Lee Hong-Ji
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Warren Matthew E
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