Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-11-12
2010-11-30
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE47001
Reexamination Certificate
active
07842938
ABSTRACT:
A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.
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Sun Ming
Tang Michael Xuefei
Venkatasamy Venkatram
Campbell Nelson Whipps LLC
Sandvik Benjamin P
Seagate Technology LLC
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