Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-17
2009-12-08
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S107000, C438S108000, C438S598000, C438S612000, C438S613000, C438S618000, C438S622000, C438S623000, C438S638000, C438S640000, C438S641000
Reexamination Certificate
active
07629250
ABSTRACT:
A method for forming at least one conductive element is disclosed. Particularly, a semiconductor substrate, including a plurality of semiconductor dice thereon, may be provided and a dielectric layer may be formed thereover. At least one depression may be laser ablated in the dielectric layer and an electrically conductive material may be deposited thereinto. Also, a method for assembling a semiconductor die having a plurality of bond pads and a dielectric layer formed thereover to a carrier substrate having a plurality of terminal pads is disclosed. At least one depression may be laser ablated into the dielectric layer and a conductive material may be deposited thereinto for electrical communication between the semiconductor die and the carrier substrate. The semiconductor die may be affixed to the carrier substrate and at least one of the dielectric layer and the conductive material may remain substantially solid during affixation therebetween. The methods may be implemented at the wafer level.
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King, Bruce “Maskless Mesoscale Materials Deposition”, Feb. 1, 2003 EP&P.
Benson Peter A.
Watkins Charles M.
Au Bac H
Micro)n Technology, Inc.
Picardat Kevin M
TraskBritt
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