Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2007-10-03
2009-12-22
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S189090, C365S201000, C365S207000
Reexamination Certificate
active
07636263
ABSTRACT:
A semiconductor memory, including word lines, bit lines, memory cells provided at intersections between the word lines and bit lines, and a sense amplifier for reading out what is stored in the memory cells, bit line selection means for selecting a bit line from among the bit lines; switch means for turning ON/OFF a current of the bit line selected by the bit line selection means; current generation means for generating a threshold current; means for extracting a differential current between the selected bit line current and the threshold current when a value of the selected bit line current is greater than that of the threshold current; voltage conversion means for converting the differential current to a voltage; and determination means for determining a magnitude relationship between the threshold current and the selected bit line current based on an output voltage from the voltage conversion means.
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Lam David
McDermott Will & Emery LLP
Panasonic Corporation
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